Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY
Identifieur interne : 003A41 ( Main/Repository ); précédent : 003A40; suivant : 003A42Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY
Auteurs : RBID : Pascal:11-0161692Descripteurs français
- Pascal (Inist)
- Traitement par laser, Laser pulsé, Application laser, Méthode ablation laser, Méthode temps vol, Rayonnement IR, Nanostructure, Agrégat, Composé binaire, Semiconducteur III-V, Indium Phosphure, Zinc Oxyde, Oxyde de zinc, Phosphure d'indium, Indium, Emission particule, Semiconducteur II-VI, Vaporisation, ZnO, In P, O Zn, InP, 4262C, 3640.
English descriptors
- KwdEn :
- Aggregate, Binary compounds, II-VI semiconductors, III-V semiconductors, Indium, Indium Phosphides, Indium phosphide, Infrared radiation, Laser ablation technique, Laser assisted processing, Laser beam applications, Nanostructures, Particle emission, Pulsed lasers, Time-of-flight method, Vaporization, Zinc Oxides, Zinc oxide.
Abstract
Formation of small clusters during pulsed ablation of two binary semiconductors, zinc oxide and indium phosphide, in vacuum by UV, visible, and IR laser radiation is comparatively studied. The irradiation conditions favourable for generation of neutral and charged ZnnOm and InnPm clusters of different stoichiometry in the ablation products are found. The size and composition of the clusters, their expansion dynamics and reactivity are analysed by time-of-flight mass spectrometry. A particular attention is paid to the mechanisms of ZnO and InP ablation as a function of laser fluence, with the use of different ablation models. It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. It is shown that this radically different character of semiconductor ablation determines the composition of the nanostructures formed: zinc oxide clusters are mainly stoichiometric, whereas InnPm particles are significantly enriched with indium.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY</title><author><name sortKey="Bulgakov, A V" uniqKey="Bulgakov A">A. V. Bulgakov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, prosp. akad. Lavrent'eva 1</s1><s2>Novosibirsk, 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk, 630090</wicri:noRegion></affiliation></author><author><name sortKey="Evtushenko, A B" uniqKey="Evtushenko A">A. B. Evtushenko</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, prosp. akad. Lavrent'eva 1</s1><s2>Novosibirsk, 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk, 630090</wicri:noRegion></affiliation></author><author><name sortKey="Shukhov, Yu G" uniqKey="Shukhov Y">Yu. G. Shukhov</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Institute of Thermophysics, Siberian Branch, Russian Academy of Sciences, prosp. akad. Lavrent'eva 1</s1><s2>Novosibirsk, 630090</s2><s3>RUS</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country>Russie</country><wicri:noRegion>Novosibirsk, 630090</wicri:noRegion></affiliation></author><author><name sortKey="Ozerov, I" uniqKey="Ozerov I">I. Ozerov</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Université de la Mediterranée, CINaM, UPR CNRS 3118</s1><s2>Marseille</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName><orgName type="university">Université de la Méditerranée</orgName><placeName><settlement type="city">Marseille</settlement><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region></placeName></affiliation></author><author><name sortKey="Marine, W" uniqKey="Marine W">W. Marine</name><affiliation wicri:level="4"><inist:fA14 i1="02"><s1>Université de la Mediterranée, CINaM, UPR CNRS 3118</s1><s2>Marseille</s2><s3>FRA</s3><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country>France</country><placeName><region type="région">Provence-Alpes-Côte d'Azur</region><settlement type="city">Marseille</settlement></placeName><orgName type="university">Université de la Méditerranée</orgName><placeName><settlement type="city">Marseille</settlement><region type="region" nuts="2">Provence-Alpes-Côte d'Azur</region></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">11-0161692</idno><date when="2010">2010</date><idno type="stanalyst">PASCAL 11-0161692 INIST</idno><idno type="RBID">Pascal:11-0161692</idno><idno type="wicri:Area/Main/Corpus">003397</idno><idno type="wicri:Area/Main/Repository">003A41</idno></publicationStmt><seriesStmt><idno type="ISSN">1063-7818</idno><title level="j" type="abbreviated">Quantum electron. : (Woodbury N.Y.)</title><title level="j" type="main">Quantum electronics : (Woodbury)</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aggregate</term><term>Binary compounds</term><term>II-VI semiconductors</term><term>III-V semiconductors</term><term>Indium</term><term>Indium Phosphides</term><term>Indium phosphide</term><term>Infrared radiation</term><term>Laser ablation technique</term><term>Laser assisted processing</term><term>Laser beam applications</term><term>Nanostructures</term><term>Particle emission</term><term>Pulsed lasers</term><term>Time-of-flight method</term><term>Vaporization</term><term>Zinc Oxides</term><term>Zinc oxide</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Traitement par laser</term><term>Laser pulsé</term><term>Application laser</term><term>Méthode ablation laser</term><term>Méthode temps vol</term><term>Rayonnement IR</term><term>Nanostructure</term><term>Agrégat</term><term>Composé binaire</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>Zinc Oxyde</term><term>Oxyde de zinc</term><term>Phosphure d'indium</term><term>Indium</term><term>Emission particule</term><term>Semiconducteur II-VI</term><term>Vaporisation</term><term>ZnO</term><term>In P</term><term>O Zn</term><term>InP</term><term>4262C</term><term>3640</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Formation of small clusters during pulsed ablation of two binary semiconductors, zinc oxide and indium phosphide, in vacuum by UV, visible, and IR laser radiation is comparatively studied. The irradiation conditions favourable for generation of neutral and charged Zn<sub>n</sub>O<sub>m</sub> and In<sub>n</sub>P<sub>m</sub> clusters of different stoichiometry in the ablation products are found. The size and composition of the clusters, their expansion dynamics and reactivity are analysed by time-of-flight mass spectrometry. A particular attention is paid to the mechanisms of ZnO and InP ablation as a function of laser fluence, with the use of different ablation models. It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. It is shown that this radically different character of semiconductor ablation determines the composition of the nanostructures formed: zinc oxide clusters are mainly stoichiometric, whereas In<sub>n</sub>P<sub>m</sub> particles are significantly enriched with indium.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>1063-7818</s0></fA01><fA03 i2="1"><s0>Quantum electron. : (Woodbury N.Y.)</s0></fA03><fA05><s2>40</s2></fA05><fA06><s2>11</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Pulsed laser ablation of binary semiconductors: mechanisms of vaporisation and cluster formation : PHOTONICS AND NANOTECHNOLOGY</s1></fA08><fA11 i1="01" i2="1"><s1>BULGAKOV (A. V.)</s1></fA11><fA11 i1="02" i2="1"><s1>EVTUSHENKO (A. B.)</s1></fA11><fA11 i1="03" i2="1"><s1>SHUKHOV (Yu. 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It is established that ZnO evapourates congruently in a wide range of irradiation conditions, while InP ablation leads to enrichment of the target surface with indium. 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